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Lifang Tan, Jiangli Han, Rafael G. Mendes, Mark H. Rümmeli, Jinxin Liu, Qiong Wu, Xuanye Leng, Tao Zhang, Mengqi Zeng, Lei Fu*, "Self-Aligned Single-crystalline Hexagonal Boron Nitride Arrays: Towards Higher Integrated Electronic Devices", Adv. Electron. Mater. 2015, 1, 1500223.

The h-BN SASCA shows orderly alignment and uniformly distribution. Moreover, it exhibits highly accordant spatial orientation and homogenous domain size, which can realize highly integrated and individually switching field-effect transistors (FETs) when serving as gate dielectrics. Additionally, circular h-BN single-crystals, which are considered as the building blocks of h-BN SASCA, are also observed.

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